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applications ? rohs compliant ? ? lead-free (qualified up to 260c reflow) ? application specifies mosfets ? ideal for high performance isolated converter primary switch socket ? optimized for synchronous rectification ? low conduction losses ? low profile (< 0.7mm) ? dual sided cooling compatible ? ? compatible with existing surface mount techniques ? v dss v gs 100v min. 20v max q g tot q gd 28nc 9.0nc r ds(on) (typ . ) 10.3m ?? @ 10v v gs(th) 3.7v final datasheet please read the important notice and warnings at the end of this document v2.0 www.infineon.com 2017-03-28 IRF6644PBF ir mosfet ? figure 1 typical on-resistance vs. gate voltage figure 2 typical on-resistance vs. drain current typical values (unless otherwise specified ) directfet ? isometric ? ? mn d d g s s directfet ? power mosfet ?? quality requirement category: consumer applicable directfet ? outline and substrate outline (see pg. 13, 14 for details) ? sh sj sp mz mn description the IRF6644PBF combines the latest hexfet ? power mosfet silicon technology with the advanced directfet ? packaging to achieve the lowest on-state resistance in a packag e that has a footprint of a so-8 and only 0.7 mm profile. the directfet ? package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection solderin g tech- niques, when application note an-1035 is followed regardin g the manufacturing methods an d processes. the directfet ? package allows dual sided cooling to maximize thermal transfer in power sy stems improving previous best thermal resistance by 80%. the IRF6644PBF is optimized for primary side bridge topologies in isolated dc-dc applications, for wide range universal input t elecom applications (36v-75v), and for secondary side synchronous rectification in regulated dc-dc topo logies. the reduced total loss es in the device coupled with the high level of thermal performance enables high e ff iciency and low temperatures, whic h are key for system reliabil- ity improvements, and makes the device ideal fo r high performance isolated dc-dc converters. 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 35 40 45 50 55 60 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 34a t j = 25c t j = 125c 0 20 40 60 80 100 120 140 160 i d , drain current (a) 0 10 20 30 40 50 60 70 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 7.0v vgs = 8.0v vgs = 10v vgs = 12v
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 2 ? table of contents table of contents applications ?..???????????????????????????...?????..?????1 description ?.??????????????????????????????????????1 table of contents ?.????????????????????????????????????...2 1 parameters ????????????????????????????????????3 2 maximum ratings, therma l, and avalanche characteristics ???????????????4 3 electrical characteristics ??????????????????????????????5 4 electrical ch aracteristic diagrams ??????????????????????????6 package information ????????????????????????????????????13 qualification information ???????????????????????????????????16 revision history ??????????????????????????????????..????17
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 3 ? 1 parameters table1 key performance parameters parameter values units v ds ? 100 v r ds(on) max ? 13 m ? i d @ t c @ 25c 57 a i d @ t a @ 25c 10 a parameters
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 4 ? table 2 maximum ratings (at t j =25 c, unless otherwise specified) parameter symbol conditions values unit continuous drain current (silicon limited) ? i d t c = 25c, v gs @ 10v 57 a continuous drain current (silicon limited) ? i d t c = 70c, v gs @ 10v 46 continuous drain current (silicon limited) ? i d t a = 25c, v gs @ 10v 10 pulsed drain current ? i dm t c = 25c 228 maximum power dissipation ? p d t c = 25c 89 w maximum power dissipation ? p d t c = 70c 57 maximum power dissipation ? p d t a = 25c 2.8 gate-to-source voltage v gs - 20 v peak soldering temperature t p - 270 c ? operating and storage temperature t j, t stg - -40 ... 150 table 4 avalanche characteristics parameter symbol values unit single pulse avalanche energy ? e as 86 mj ? avalanche current ? i ar 34 a table 3 thermal characteristics parameter symbol conditions min. typ. max. unit junction-to-ambient ? r ? ja - - - 45 c/w junction-to-ambient ? r ? ja - - 12.5 - junction-to-ambient ? r ? ja - - 20 - junction-to-case ?? r ? jc - - - 1.4 junction-to-pcb mounted r ? ja-pcb - - 1.0 - 2 maximum ratings and thermal characteristics maximum ratings and thermal characteristics notes: ?? click on this section to link to the appropriate technical paper. ? ? click on this section to link to the directfet? website. ?? surface mounted on 1 in. squa re cu board, steady state. ?? tc measured with thermocouple mounted to top (drain) of part. ?? repetitive rating; pulse width limi ted by max. junction temperature. ?? (starting t j = 25c, l = 0.15mh, r g = 50 ? , i as = 34a. ?? pulse width 400s; duty cycle 2%. ?? used double sided cooling, moun ting pad with large heat sink. ?? mounted on minimum footprint full size board with metalized back and with small clip heat sink. ?? r ? is measured at t j of approximately 90c.
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 5 ? d s g table 6 dynamic characteristics parameter symbol conditions values unit min. typ. max. forward trans co nductance gfs v ds = 10v, i d = 34a 65 - - s total gate charge q g i d = 34a v ds = 50v v gs = 10v see fig.8 - 28 42 nc pre-vth gate-to-source charge q gs1 - 7.0 - post-vth gate-to-source charge q gs2 - 3.0 - gate-to-drain charge q gd - 9.0 - gate charge overdrive q godr - 9.0 - switch charge (qgs2 + qgd) q sw - 16 - output charge q oss v ds = 16v ,v gs = 0v - 18 - nc turn-on delay time t d(on) v dd = 50v - 9.5 - rise time t r i d = 34a - 16 - turn-o ff delay time t d(o ff ) r g = 1.8 ? - 15 - fall time t f v gs = 10v ? - 5.7 - input capacitance c iss v gs = 0v - 1770 - pf output capacitance c oss v ds = 50v - 280 - reverse transfer capacitance c rss ? = 1.0mhz - 60 - output capacitance c oss v gs = 0v, v ds = 1.0v, ? = 1.0mhz - 2025 - output capacitance c oss v gs = 0v, v ds = 80v, ? = 1.0mhz - 245 - ns ? table 7 reverse diode parameter symbol conditions values unit min. typ. max. continuous source current i s mosfet symbol - - 57 a (body diode) showing the pulsed source current i sm integral reverse - - 228 (body diode) ? p-n junction diode. diode forward voltage v sd t j = 25c, i s = 34a,v gs = 0v ? - - 1.3 v reverse recovery time t rr t j = 25c, i f = 34a, v dd = 50v - 53 80 ns reverse recovery charge q rr di/dt = 100a/s - 97 146 nc table 5 static characteristics parameter symbol conditions values unit min. typ. max. drain-to-source breakdown voltage v (br)dss v gs = 0v, i d = 250a 100 - - v breakdown voltage temp. coe ff icient ?v (br)dss /?t j reference to 25c, i d = 1ma - 0.1 - v/c static drain-to-source on-resistance r ds(on) v gs = 10v, i d = 34a ? - 10.3 13 m ? gate threshold voltage v gs(th) v ds = v gs , i d = 150a 2.8 3.7 4.8 v gate threshold voltage temp. coe ff icient ?v gs(th) / ?t j - -11 - mv/c drain-to-source leakage current v ds = 100v, v gs = 0v - - 20 a v ds = 80v, v gs = 0v, t j = 125c 250 gate-to-source forward leakage i gss v gs = 20v - - 100 na ? i gss v gs = -20v - - -100 gate resistance r g - - 1.6 - ?? i dss 3 electrical characteristics electrical characteristics
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 6 ? electrical characteristic diagrams 4 electrical characteristic diagrams figure 3 typical output characteristics figure 4 typical output characteristics figure 5 typical transfer characteristics figure 6 normalized on-resistance vs. temperature ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) vgs top 15v 10v 8.0v 7.0v 6.0v bottom 5.0v ? 60s pulse width tj = 150c 5.0v 2 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) t j = 25c t j = 150c v ds = 50v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r ds(on) , drain-to-source on resistance (normalized) i d = 34a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) vgs top 15v 10v 8.0v 7.0v 6.0v bottom 5.0v ? 60s pulse width tj = 25c 5.0v
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 7 ? electrical characteristic diagrams figure 7 typical capacitance vs. drain-to-source voltage figure 8 typical gate charge vs. gate-to-source voltage figure 9 typical source-drain diode forward voltage figure 10 maximum safe operating area ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) v ds = 80v v ds = 50v vds= 20v i d = 34a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 8 ? electrical characteristic diagrams figure 11 maximum drain current vs. case temperature figure 12 typical threshold voltage vs. junction temperature figure 13 maximum avalanche energy vs. drain current ? ? 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , drain current (a) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs(th) , gate threshold voltage (v) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.2a 8.9a bottom 34a
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 9 ? electrical characteristic diagrams figure 14 typical avalanche current vs. pulse width figure 15 maximum e ff ective transient thermal impedance, junction-to-case ? ? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming dtj = 25c and tstart = 125c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming dtj = 125c and tstart =25c (single pulse)
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 10 electrical characteristic diagrams figure 16 peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets ? ? ? surface mounted on 1 in. square cu board (still air). ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). ? mounted to pcb with small clip heatsink (still air).
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 11 electrical characteristic diagrams figure 17a gate charge test circuit figure 17b gate charge waveform ? figure 18a unclamped inductive test circuit figure 18b unclamped inductive waveforms ?
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 12 electrical characteristic diagrams figure 19a switching time test circuit figure 19b switching time waveforms ?
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 13 package information 5 package information directfet? board footprint, mn outline please see directfet? application note an-1035 for all details regarding the assembly of directfet?. this includes all recommendations for stencil and substrate designs. note: for the most current drawing please refer to website at : www.irf.com/package/
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 14 package information directfet tm part marking directfet? outline dimension, mn outline (medium size can, n-designation). please see directfet? application note an-1035 for all details regarding the assembly of directfet?. this includes all recommendations for stencil and substrate designs. note: for the most current drawing please refer to website at : www.irf.com/package/
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 15 directfet tm tape & reel dimension (showing component orientation). tape & reel information note: for the most current drawing please refer to website at : www.irf.com/package/
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 16 ? applicable version of jedec standa rd at the time of product release. ? qualification information qualification level consumer (per jedec jesd47f) ? moisture sensitivity level directfet? medium can msl1 (per jedec j-std-020d) ? rohs compliant yes qualification information 6 qualification information
final datasheet v2.0 2017-03-28 ir mosfet IRF6644PBF 17 revision history revision history major changes since the last revision page or reference revision date description of changes all pages 1.0 2006-08-18 ?? first release data sheet. all page 2.0 2017-03-28 ?? this is unique datasheet project with id ratings based on rthjc. ?? the datasheet is converted in new infineon template.
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